代表性论文
(1) Juan Du, Jun-jie Shi*, Jin-xiang Deng and Cong-xin Xia, Flexible chalcogenide perovskite Ba3Te2S7 with high electron mobility and strong optical absorption ability, Journal of Materials Chemistry C, 2024,12, 3698-3707.
(2) Juan Du, Jun-jie Shi*, 2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7´104 cm2 V−1 s−1, Advanced Materials, 2019, 31(51), 1905643.
(3) Juan Du, Jun-jie Shi*, 3D graphene-like semiconductor Ba2HfTe4 with electronic structure similar to graphene and bandgap close to silicon, Cell Reports Physical Science, 2021, 2, 100658.
(4) Juan Du, Jun-jie Shi*, Wen-hui Guo, Shi-ming Liu, Yong He, Chong Tian, Yao-hui Zhu, Hong-xia Zhong, Cerium-based Lead-free Chalcogenide Perovskites for Photovoltaics, Physical Review B 2021, 104, 235206.
(5) Yong Yan1, Juehan Yang1, Juan Du1, Xiaomei Zhang, Yue-Yang Liu, Congxin Xia*, Zhongming Wei*, Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate, Advanced Materials, 2021, 33(22), 2008761.
(6) Chong Tian, Yong He, Yao-hui Zhu,* Juan Du,* Shi-ming Liu, Wen-hui Guo, Hong-xia Zhong, Jing Lu, Xinqiang Wang, and Jun-jie Shi*, Few-Hydrogen Metal-Bonded Perovskite Superconductor MgHCu3 with a Critical Temperature of 42 K under Atmospheric Pressure, Advanced Functional Materials, 2023, 2304919.
(7) Juan Du, Jun-jie Shi*, Jin-xiang Deng, Cong-xin Xia*, Flexible chalcogenide perovskite Ba3Te2S7 with high electron mobility and strong optical absorption ability, Journal of Materials Chemistry C, 2024, DOI: 10.1039/D3TC04221A.
(8) Juan Du, Congxin Xia*, Wenqi Xiong, Tianxing Wang, Yu Jia, Jingbo Li*, Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures, Nanoscale, 2017, 9, 17585.
(9) Juan Du, Congxin Xia*, Tianxing Wang, Wenqi Xiong, Jingbo Li*, Modulation of the band structures and optical properties of holey C2N nanosheets by alloying with group IV and V elements, Journal of Materials Chemistry C, 2016, 4, 9294.
(10) Juan Du, Congxin Xia*, Tianxing Wang, Xu Zhao, Xiaoming Tan, Shuyi Wei, First-principles studies on substitutional doping by group IV and VI atoms in the two-dimensional arsenene, Applied Surface Science, 2016, 378, 350.
(11) Juan Du, Congxin Xia*, Yipeng An, Tianxing Wang, Yu Jia, Tunable electronic structures and magnetism in arsenene nanosheets via transition metal doping, Journal of Materials Science, 2016, 51, 9504.
(12) Juan Du, Congxin Xia, Wenqi Xiong, Xu Zhao, Tianxing Wang, Yu Jia, Tuning the electronic structures and magnetism of two-dimensional porous C2N via transition metal embedding, Physical Chemistry Chemical Physics, 2016, 18, 22678.
(13) Congxin Xia*, Juan Du, Meng Li, Xueping Li, Xu Zhao, Tianxing Wang, and Jingbo Li, Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX2 (X =S, Se) van der Waals Heterojunctions, Physical Review Applied, 2018, 10, 054064.
(14) Congxin Xia*, Juan Du, Xiaowei Huang, Wenbo Xiao, Wenqi Xiong, Tian-xing Wang, Zhongming Wei, Yu Jia, Junjie Shi*, Jing-bo Li*, Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance, Physical Review B, 2018, 97, 115416.
(15) Congxin Xia*, Juan Du, Wenqi Xiong, Yu Jia, Zhongming Wei, Jingbo Li. A type-II GeSe/SnS heterobilayer with suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications, Journal of Materials Chemistry A, 2017, 5, 13400.
